| PART |
Description |
Maker |
| 1014-6A |
1000-1400 MHz, 28V, Class C, Common Base; fO (MHz): 1400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 28; Cob (pF): 3.5; Case Style: 55LV-1 L BAND, Si, NPN, RF POWER TRANSISTOR
6 Watts - 28 Volts, Class C Microwave 1000 - 1400 MHz
|
Microsemi, Corp.
Microsemi Corporation
|
| SSM5G11TU |
DC-DC Converter Applications
1400 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Toshiba Semiconductor
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| VSKEL240-14S20 |
250 A, 1400 V, SILICON, RECTIFIER DIODE
|
VISHAY SEMICONDUCTORS
|
| CPR1-120LEADFREE CPR1-080LEADFREE CPR1-100LEADFREE |
1 A, 1200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 800 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 1000 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 100 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 600 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 400 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
|
Central Semiconductor, Corp.
|
| FM4006L-HF-W FM4007L-HF FM4003L FM4004L-HF-T |
1 A, 800 V, SILICON, SIGNAL DIODE
1 A, 1000 V, SILICON, SIGNAL DIODE
1 A, 200 V, SILICON, SIGNAL DIODE
1 A, 400 V, SILICON, SIGNAL DIODE
|
RECTRON LTD
|
| ER1VG |
1 Amp Super Fast Recovery Silicon Rectifier 1400 Volts
|
Micro Commercial Components Corp.
|
| 1N347 1N256 1N2029 1N2370 1N1342B 1N338 |
1 A, 100 V, SILICON, SIGNAL DIODE
1 A, 600 V, SILICON, SIGNAL DIODE
1 A, 400 V, SILICON, SIGNAL DIODE
1 A, 2000 V, SILICON, SIGNAL DIODE
6 A, 100 V, SILICON, RECTIFIER DIODE
|
|
| 1014-12 |
12 W, 28 V, 1000-1400 MHz common base transistor
12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz
L BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
List of Unclassifed Manufacturers
ETC[ETC]
|
| AM50-0006 AM50-0006PCS AM50-0006PDC AM50-0006TR AM |
1400-2000 MHz, low noise amplifier
Circular Connector; No. of Contacts:128; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
Low Noise Amplifier 1400 - 2000 MHz
1400-1520 MHz, low noise amplifier
|
MACOM[Tyco Electronics]
MA-Com
|
| BYW27-200TR BYW27-1000TR BYW27-100TR BYW27-400AMP |
1 A, 200 V, SILICON, SIGNAL DIODE PLASTIC PACKAGE-2
1 A, 1000 V, SILICON, SIGNAL DIODE PLASTIC PACKAGE-2
1 A, 100 V, SILICON, SIGNAL DIODE PLASTIC PACKAGE-2
1 A, 400 V, SILICON, SIGNAL DIODE PLASTIC PACKAGE-2
1 A, 600 V, SILICON, SIGNAL DIODE PLASTIC PACKAGE-2
|
Vishay Beyschlag
TE Connectivity, Ltd.
TOKO, Inc.
|
| ESC-2-1TR |
E-Series 2-Way 0Power Divider 0.1400 MHz E系列2？功分器0.1400兆赫
E-Series 2-Way 0?Power Divider 0.1400 MHz
|
Abracon, Corp.
|
|
